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IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 1 2.95w mono filter-less class-d audio power amplifier general description the IS31AP2005 is a high efficiency, 2.95w mono class-d audio power amplifier. a low noise, filter-less pwm architecture eliminates the output filter, reducing external component count, system cost, and simplifying design. operating in a single 5v supply, IS31AP2005 is capable of driving 4 ? speaker load at a continuous average output of 2.95w with 10% thd+n. the IS31AP2005 has high efficiency with speaker load compared to a typical class ab amplifier. in cellular handsets, the earpiece, speaker phone, and melody ringer can each be driven by the IS31AP2005. the gain of IS31AP2005 is externally configurable which allows independent gain control from multiple sources by summing signals from each function. the IS31AP2005 is available in dfn and msop packages. applications ? wireless or cellular handsets and pdas ? portable dvd player ? notebook pc ? portable radio ? educational toys ? usb speakers ? portable gaming features ? 5v supply at thd = 10% ? - 2.95w into 4 ? (typ.) ? - 1.70w into 8 ? (typ.) ? efficiency at 5v: ? - 83% at 400mw with a 4 ? speaker ? - 89% at 400mw with an 8 ? speaker ? optimized pwm output stage eliminates lc output filter ? fully differential design reduces rf rectification and eliminates bypass capacitor ? integrated pop-and-click suppression circuitry ? 3mm 3mm dfn-8 and msop-8 package ? rohs compliant and 100% lead(pb)-free typical application circuit figure 1 typical IS31AP2005 application schematic with differential input ? copyright ? ? ? 2011 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances july 2011 http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 2 figure 2 typical IS31AP2005 application schematic with single-ended input http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 3 pin configuration package pin configuration (top view) dfn-8 msop-8 pin description dfn-8 msop-8 pin i/o description 1 1 sdb i shutdown terminal, active low logic. 2 2 nc - no internal connection. 3 3 in+ i positive differential input. 4 4 in - i negative differential input. 5 5 out+ o positive btl output. 6 6 vdd - power supply. 7 7 gnd - high-current ground. 8 8 out - o negative btl output. no thermal pad - connect to gnd. http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 4 ordering information industrial range: -40c to +85c order part no. package qty/reel IS31AP2005-dls2-tr IS31AP2005-sls2-tr dfn-8, lead-free msop-8, lead-free 2500 2500 http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 5 absolute maximum ratings (note 1) supply voltage, v dd - 0.3v ~ +6.0v voltage at any input pin - 0.3v ~ v dd +0.3v junction temperature, t jmax - 40c ~ +150c storage temperature range, tstg - 65c ~ +150c esd susceptibility 6kv lead temperature 1,6 mm (1/16 inch) from case for 10s 260c thermal resistance ja (dfn) 47c/w note: 1. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rat ings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliabilit y. recommended operating conditions parameter min. max. unit supply voltage, v dd 2.7 5.5 v high-level input voltage, v ih shutdown 1.4 v dd v low-level input voltage, v il shutdown 0 0.4 v input resistor, r i gain ? 15 k ? common mode input voltage range, v ic v dd = 2.7v, 5.5v 0.5 v dd -0.8 v operating free-air temperature, t a - 40 85 c electrical characteristics t a = 25c (note 2) symbol parameter condition min. typ. max. unit | v os | output offset voltage (measured differentially) v i = 0v, a v = 2v/v, v dd = 2.7v ~ 5.5v 10 mv |i ih | high-level input current v dd = 5.5v, v i = 5.8v 35 a | i il | low-level input current v dd = 5.5v, v i = - 0.3v 2 a i q quiescent current v dd = 5.5v, no load 2.6 ma v dd = 2.7v, no load 1.2 i sd shutdown current v shutdown = 0.4v, v dd = 2.7v ~ 5.5v 1 a fsw switching frequency v dd = 2.7v ~ 5.5v 250 khz gain v dd = 2.7v ~ 5.5v, r i = 150k ? 2 v/v http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 6 electrical characteristics t a = 25c, gain= 2v/v. (note 3) symbol parameter condition min. typ. max. unit p o output power thd+n = 10% f = 1khz, r l = 8 ? +33 h v dd = 5.0v 1.70 w v dd = 4.2v 1.20 v dd = 3.6v 0.83 thd+n = 10% f = 1khz, r l = 4 ? +33 h v dd = 5.0v 2.95 w v dd = 4.2v 2.05 v dd = 3.6v 1.55 thd+n = 1% f = 1khz, r l = 8 ? +33 h v dd = 5.0v 1.45 w v dd = 4.2v 0.95 v dd = 3.6v 0.66 thd+n=1% f = 1khz, r l = 4 ? +33 h v dd = 5.0v 2.50 w v dd = 4.2v 1.70 v dd = 3.6v 1.25 thd+n total harmonic distortion plus noise v dd = 5.0v, p o =1.0w, r l = 8 ? +33 h f = 1khz 0.28 % v dd = 5.0v, p o =1.2w, r l = 4 ? +33 h f = 1khz 0.31 v n output voltage noise v dd = 3.6v~5v, f =20hz to 20khz, inputs ac-grounded with c i = 1 f a-weighting 68 vrms t wu wake-up time from shutdown v dd = 3.6v 36 ms snr signal-to-noise ratio p o =1.0w, r l = 8 ? +33 h, v dd = 5.0v 92 db psrr power supply rejection ratio v dd = 2.7v ~ 5.5v - 55 db notes: 1. stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating cond itions is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. all parts are production tested at t a = 25c. other temperature limits are guaranteed by design 3. guaranteed by design http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 7 typical performance characteristics thd+n(%) output power(w) 20 0.1 0.2 0.5 1 2 5 10 10m 3 20m 50m 100m 200m 500m 12 r l = 8 ? +33h f = 1khz v dd = 3.6v v dd = 4.2v v dd = 5.0v figure 3 thd+n vs. output power 0.01 0.02 0.05 0.1 0.2 1 2 10 thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 20 v dd = 3.6v p o = 500mw v dd = 5.0v p o = 1w r l = 8 ? +33h figure 5 thd+n vs. frequency output voltage(uv) 20 20k 50 100 200 1k 2k 5k 10k frequency(hz) 10 200 20 30 50 70 100 v dd = 3.6v~5.0v r l = 8 ? +33h figure 7 noise vs. frequency thd+n(%) output power(w) 20 0.1 0.2 0.5 1 2 5 10 10m 3 20m 50m 100m 200m 500m 12 4 r l = 4 ? +33h f = 1khz v dd = 3.6v v dd = 4.2v v dd = 5.0v figure 4 thd+n vs. output power 0.01 0.02 0.05 0.1 0.2 1 2 10 thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 20 r l = 4 ? +33h v dd = 3.6v p o = 650mw v dd = 5.0v p o = 1.2w figure 6 thd+n vs. frequency frequency(hz) psrr(db) -100 0 -80 -60 -40 -20 20 20k 50 100 200 500 1k 2k 5k r l = 8 ? +33 h input grounded v dd = 5.0v v dd = 4.2v v dd = 3.6v figure 8 psrr vs. frequency http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 8 power supply(v) output power(w) 2.5 3 3.5 4 4.5 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 r l = 8 ? +33 h f = 1khz thd+n = 1% thd+n = 10% figure 9 output power vs. supply voltage e f ficiency(%) 0 vcc=5v gain=2v/v r l =4ohm r l =8ohm figure 11 efficiency vs. output power power supply(v) output power(w) 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 r l = 4 ? +33 h f = 1khz thd+n = 10% thd+n = 1% figure 10 output power vs. supply voltage v dd = 5.0v http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 9 application information fully differential amplifier the IS31AP2005 is a fully differential amplifier with differential inputs and outputs. the fully differential amplifier consists of a di fferential amplifier and a common-mode amplifier. the differential amplifier ensures that the amplifier outputs a differential voltage on the output that is equal to the differential input times the gain. the common-mode feedback ensures that the common-mode voltage at the output is biased around v dd /2 regardless of the common-mode voltage at the input. the fully differential IS31AP2005 can still be used with a single-end ed input; however, the IS31AP2005 should be used with differential inputs when in a noisy environment, like a wireless handset, to ensure maximum noise rejection. advantages of fully differential amplifiers the fully differential amplifier does not require a bypass capacitor. this is because any shift in the midsupply affects both positive and negative channels equally and cancels at the differential output. gsm handsets save power by turning on and shutting off the rf transmitter at a rate of 217hz. the transmitted signal is picked-up on input and output traces. the fully differential amplifier cancels the signal much better than the typical audio amplifier. component selection figure 12 shows the IS31AP2005 with differential inputs and optional input capacitors. input capacitors are used when the common mode input voltage range specs can not be guaranteed or high pass filter is considered. figure 13 shows the IS31AP2005 with single-ended inputs. the input capacitors have to be used in the single ended case because it is much more susceptible to noise in this case. figure 12 typical application schematic with differential input figure 13 typical application schematic with single-ended input input resistors (r i ) the input resistors (r i ) set the gain of the amplifier according to equation (1). i r ain ? ? ? 0k 5 1 2 g ? ? ? ? ? ? v v (1) resistor matching is very important in fully differential amplifiers. the balance of the output on the reference voltage depends on matched ratios of the resistors. cmrr, psrr, and cancellation of the second harmonic distortion diminish if resistor mismatch occurs. therefore, it is recommended to use 1% accuracy resistors or better to keep the performance optimized. matching is more important than overall accuracy. place the input resistors close to the IS31AP2005 to reduce noise injection on the high-impedance nodes. for optimal performance the gain should be set to 2 v/v or lower. lower gain allows the IS31AP2005 to operate at its best, and keeps a high voltage at the input making the inputs less susceptible to noise. decoupling capacitor (c s ) the IS31AP2005 is a high-performance class-d audio amplifier that requires adequate power supply decoupling to ensure high efficiency and low total harmonic distortion (thd). for higher frequency transients, spikes, or digital noises on the line, a good low equivalent-series-resistance (esr) ceramic capacitor, typically 1 f, placed as close as possible to the device v dd pin works best. placing this decoupling capacitor close to the IS31AP2005 is also important for the efficiency of the class-d amplifier, because any resistance or inductance in the trace between the device and the capacitor can cause a loss in efficiency. for filtering lower-frequency noise signals, a 10 f or greater capacitor placed near the audio power amplifier would also be helpful, but it is not required in most applications because of better psrr of this device. http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 10 input capacitors (c i ) the input capacitors and input resistors form a high-pass filter with the corner frequency, f c , determined in equation (2). ?? i i c r c f ? 2 1 ? (2) the value of the input capacitor is important to consider as it directly affects the bass (low frequency) performance of the circuit. speakers in wireless phones cannot usually respond well to low frequencies, so the corner frequency can be set to block low frequencies in this application. equation (3) is reconfigured to solve for the input coupling capacitance. ?? c i f r i c ? 2 1 ? (3) if the corner frequency is within the audio band, the capacitors should have a tolerance of ? 10% or better, because any mismatch in capacitance causes an impedance mismatch at the corner frequency and below. for a flat low-frequency response, use large input coupling capacitors (1 f). however, in a gsm phone the ground signal is fluctuating at 217hz, but the signal from the codec does not have the same 217hz fluctuation. the difference between the two signals is amplified, sent to the speaker, and heard as a 217hz hum. summing input signals most wireless phones or pdas need to sum signals at the audio power amplifier or just have two signal sources that need separate gain. the IS31AP2005 makes it easy to sum signals or use separate signal sources with different gains. many phones now use the same speaker for the earpiece and ringer, where the wireless phone would require a much lower gain for the phone earpiece than for the ringer. pdas and phones that have stereo headphones require summing of the right and left channels to output the stereo signal to the mono speaker. summing two differential input signals two extra resistors are needed for summing differential signals. the gain for each input source can be set independently (see equations (4) and (5), and figure 14). 1 1 150 2 1 i i o r k gain v v ? ? ? ? ? ? ? ? ? ? v v (4) 2 2 150 2 2 i i o r k gain v v ? ? ? ? ? ? ? ? ? ? v v (5) figure 14 application schematic with IS31AP2005 summing two differential inputs if summing left and right inputs with a gain of 1v/v, use r i1 = r i2 = 300k ? . if summing a ring tone and a phone signal, set the ring-tone gain to gain2 = 2v/v, and the phone gain to gain1 = 0.1v/v. the resistor values would be. r i1 = 3m ? , and r i2 = 150k ? summing a differential input signal and a single-ended input signal figure 15 shows how to sum a differential input signal and a single-ended input signal. ground noise may couple in through in- with this method. it is better to use differential inputs. the corner frequency of the single-ended input is set by c i2 , shown in equation (8). to assure that each input is balanced, the single-ended input must be driven by a low-impedance source even if the input is not in use. 1 1 150 2 1 i i o r k gain v v ? ? ? ? ? ? ? ? ? ? v v (6) 2 2 150 2 2 i i o r k gain v v ? ? ? ? ? ? ? ? ? ? v v (7) ?? 2 2 2 2 1 c i i f r c ? ? (8) if summing a ring tone and phone signals, the phone signals should use the differential inputs while the ring tone should use the single-ended input. the phone gain is set at gain1 = 0.1v/v, and the ring-tone gain is set to gain2 = 2v/v, the resistor values would be r i1 = 3m ? , and r i2 = 150k ? the high pass corner frequency of the single-ended input is set by c i2 . if the desired corner frequency is less than 20hz. ?? hz k i c 20 150 2 1 2 ? ? ? ? (9) pf c i 53 2 ? (10) http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 11 figure 15 application schematic with IS31AP2005 summing differential input and single-ended input signals summing two single-ended input signals the gain and corner frequencies (f c1 and f c2 ) for each input source can be set independently (see equations (11) through (14), and figure 16). resistor, r p , and capacitor, c p , are needed on the in- terminal to match the impedance on the in+ terminal. the single-ended inputs must be driven by low impedance sources. 1 1 150 2 1 i i o r k gain v v ? ? ? ? ? ? ? ? ? ? v v (11) 2 2 150 2 2 i i o r k gain v v ? ? ? ? ? ? ? ? ? ? v v (12) ?? 1 1 1 2 1 c i i f r c ? ? (13) ?? 2 2 2 2 1 c i i f r c ? ? (14) 2 1 i i c c cp ? ? (15) ?? 2 1 2 1 i i i r r r r rp ? ? ? ? (16) figure 16 application schematic with IS31AP2005 summing two single-ended inputs http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 12 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 17 classification profile http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 13 tape and reel information dfn-8 http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 14 msop-8 http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 15 packaging information dfn-8 http://www..net/ datasheet pdf - http://www..net/
IS31AP2005 integrated silicon solution, inc. ? www.issi.com rev. a, 07/06/2011 16 msop-8 note : all dimensions in millimeters unless otherwise stated. http://www..net/ datasheet pdf - http://www..net/

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